Galvanic etching of silicon

Colin M. A. Ashruf; Patrick J. French; Pasqualina M. Sarro; John J. Kelly

doi:10.1117/12.324329

31 August 1998 Galvanic etching of silicon

Colin M. A. Ashruf, Patrick J. French, Pasqualina M. Sarro, John J. Kelly

Proceedings Volume 3511, Micromachining and Microfabrication Process Technology IV; (1998) https://doi.org/10.1117/12.324329
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States

Abstract

Electrochemical etching of silicon is commonly used for sensor fabrication processes. In fluoride-containing solutions porous silicon can be formed while in alkaline solutions silicon can be passivated by passing an anodic current through the silicon. For batch fabrication it is more convenient to have a contactless etch method. Galvanic etching can be used for this purpose. In this paper some general aspects of galvanic etching are considered. Examples of galvanically etched structures are presented.

Citation Download Citation

Colin M. A. Ashruf, Patrick J. French, Pasqualina M. Sarro, and John J. Kelly "Galvanic etching of silicon", Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); https://doi.org/10.1117/12.324329

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