31 August 1998 Galvanic etching of silicon
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Proceedings Volume 3511, Micromachining and Microfabrication Process Technology IV; (1998) https://doi.org/10.1117/12.324329
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States
Abstract
Electrochemical etching of silicon is commonly used for sensor fabrication processes. In fluoride-containing solutions porous silicon can be formed while in alkaline solutions silicon can be passivated by passing an anodic current through the silicon. For batch fabrication it is more convenient to have a contactless etch method. Galvanic etching can be used for this purpose. In this paper some general aspects of galvanic etching are considered. Examples of galvanically etched structures are presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Colin M. A. Ashruf, Colin M. A. Ashruf, Patrick J. French, Patrick J. French, Pasqualina M. Sarro, Pasqualina M. Sarro, John J. Kelly, John J. Kelly, } "Galvanic etching of silicon", Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); doi: 10.1117/12.324329; https://doi.org/10.1117/12.324329
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