31 August 1998 Silicon surface micromachining by anhydrous HF gas-phase etching with methanol
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Proceedings Volume 3511, Micromachining and Microfabrication Process Technology IV; (1998) https://doi.org/10.1117/12.324292
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States
Abstract
In silicon surface micromachining, the newly developed GPE (gas-phase etching) process was verified as a very effective method for the release of highly compliant microstructure. The developed GPE system with anhydrous HF (hydrogen fluoride) gas and CH3OH (methanol) vapor was characterized and its selective etching properties were discussed. P-doped polysilicon and SOI (silicon on insulator) substrate were used as a structural layer and TEOS (tetraethylorthosilicate) oxide and thermal oxide as a sacrificial layer. The etch rates of HF GPE were 400 angstrom/min for sacrificial TEOS oxide and 1000 angstrom/min for bulk TEOS oxide. For SOI structures, we adopted two step process of wet etch and HF GPE process to reduce the process time and confirmed relatively low etch rate of 55 angstrom/min for 1.8 micrometer-thick thermal oxide after 6:1 BHF etching for 15 minutes.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won-Ick Jang, Won-Ick Jang, Chang-Auck Choi, Chang-Auck Choi, Chang Seung Lee, Chang Seung Lee, Yoonshik Hong, Yoonshik Hong, Jong-Hyun Lee, Jong-Hyun Lee, Jong Tae Baek, Jong Tae Baek, Bo Woo Kim, Bo Woo Kim, } "Silicon surface micromachining by anhydrous HF gas-phase etching with methanol", Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); doi: 10.1117/12.324292; https://doi.org/10.1117/12.324292
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