Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications

Roberto R. Panepucci; Jose A. Diniz; Eduardo Carli; Peter J. Tatschi; Jacobus W. Swart

doi:10.1117/12.324050

1 September 1998 Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications

Roberto R. Panepucci, Jose A. Diniz, Eduardo Carli, Peter J. Tatschi, Jacobus W. Swart

Author Affiliations +

Proceedings Volume 3512, Materials and Device Characterization in Micromachining; (1998) https://doi.org/10.1117/12.324050
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States

Abstract

An investigation of the influence of the process parameters pressure and flow on the room-temperature deposition of electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of silicon nitride has been performed. The suitability of these films for micromachining applications has been studied, in particular for the use with KOH:isopropyl:H₂O etching solutions. The deposition rate and the effect of process parameters on the physical properties of the films, as-deposited and after KOH etching, were investigated. Buffered HF etch rate, refractive index, and the infrared absorption spectra, especially the Si-N peak absorption wavenumber, were studied. We have found that films that withstand KOH etching with little modification of their physical properties can be obtained at room-temperature for depositions with low flows and low process pressures.

Citation Download Citation

Roberto R. Panepucci, Jose A. Diniz, Eduardo Carli, Peter J. Tatschi, and Jacobus W. Swart "Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications", Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); https://doi.org/10.1117/12.324050

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