8 September 1998 Efficient process development for bulk silicon etching using cellular automata simulation techniques
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Proceedings Volume 3514, Micromachined Devices and Components IV; (1998) https://doi.org/10.1117/12.323900
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States
Abstract
This paper describes cellular automata simulation techniques used to predict the anisotropic etching of single-crystal silicon. In particular, this paper will focus on the application of wet etching of silicon wafers using typical anisotropic etchants such as KOH, TMAH, and EDP. Achieving a desired final 3D geometry of etch silicon wafers often is difficult without requiring a number of fabrication design iterations. The result is wasted time and resources. AnisE, a tool to simulate anisotropic etching of silicon wafers using cellular automata simulation, was developed in order to efficiently prototype and manufacture MEMS devices. AnisE has been shown to effectively decrease device development time and costs by up to 50% and 60%, respectively.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Marchetti, Yie He, Olaf Than, Sandeep Akkaraju, "Efficient process development for bulk silicon etching using cellular automata simulation techniques", Proc. SPIE 3514, Micromachined Devices and Components IV, (8 September 1998); doi: 10.1117/12.323900; https://doi.org/10.1117/12.323900
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