18 December 1998 Temperature-stabilized silicon-based surface-acoustic-wave gas sensors for the detection of solvent vapors
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Proceedings Volume 3539, Chemical Microsensors and Applications; (1998) https://doi.org/10.1117/12.333739
Event: Photonics East (ISAM, VVDC, IEMB), 1998, Boston, MA, United States
In the current paper a dual-delay-line- and a resonator- device based on CMOS-silicon-technology is presented. As a piezoelectric layer ZnO is used. The layer was deposited at room temperature in a RF magnetron sputter process. Using x- ray diffraction it could be shown that the crystals are mostly oriented with the c-axis (hexagonal structure) perpendicular to the surface which is necessary to conduct surface acoustic waves. Pt electrodes were designed for frequencies between 140 and 600 MHz and were deposited on top using a lift-off-process. A poly-silicon heating resistor was integrated as a sublayer for controlling and changing of the temperature of the SAW-device for studying the influence of temperature on the mass sensitive layer. A Pt thin film resistance served for temperature measurement. The performance of the devices were compared to standard quartz based SAWs.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan Bender, Stefan Bender, W. Mokwa, W. Mokwa, } "Temperature-stabilized silicon-based surface-acoustic-wave gas sensors for the detection of solvent vapors", Proc. SPIE 3539, Chemical Microsensors and Applications, (18 December 1998); doi: 10.1117/12.333739; https://doi.org/10.1117/12.333739

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