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21 December 1998 DC Kerr coefficient of silica: theory and experiment
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Proceedings Volume 3542, Doped Fiber Devices II; (1998)
Event: Photonics East (ISAM, VVDC, IEMB), 1998, Boston, MA, United States
We report the first measurement of the frequency and polarization dependence of the low-frequency third-order nonlinear susceptibility (chi) (3)(-(omega) ;(omega) ,0,0) of silica. In the frequency range tested (0.5 - 19 MHz), we observed sharp resonances with a complex dependence on polarization. Observations are quantitatively well explained by a theoretical model that assumes the presence of two contributions to (chi) (3), namely the Kerr effect and electrostriction. The model shows that our measurements are consistent with (1) a DC Kerr constant of 1.9 X 10-22 m2/V2 with a 3:1 polarization dependence, comparable to the Kerr constant at optical frequencies, and (2) an electrostriction modulation that is greatly enhanced by mechanical resonances of the sample and exhibits a polarization dependence of 2.3:1, in agreement with an elasto-optic model. This work suggests new means of producing a low-voltage, high-frequency phase modulator by operating at a fundamental resonance of the structure. It also lends credence to the general belief that DC rectification does not fully account for the large second- order nonlinearity that occurs in poled silica.
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Alice C. Liu, Michel J. F. Digonnet, and Gordon S. Kino "DC Kerr coefficient of silica: theory and experiment", Proc. SPIE 3542, Doped Fiber Devices II, (21 December 1998);


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