Paper
25 September 1998 a-Si TFT/PIN two-dimensional image sensor
Ying Zhao, Jing Li, Junfeng Li, Shaozhen Xiong
Author Affiliations +
Proceedings Volume 3545, International Symposium on Multispectral Image Processing (ISMIP'98); (1998) https://doi.org/10.1117/12.323641
Event: International Symposium on Multispectral Image Processing, 1998, Wuhan, China
Abstract
Basing on the analysis and simulation of a-Si TFT/PIN coupled unit, we obtained optimized design for structure parameters of detecting unit and material parameters suitable for detecting spectrum. In order to satisfy the low-temperature process of a-Si TFT and a-Si PIN, polyimide (PI) film has been used as the insulator in the TFT/PIN array. We have investigated process compatibility between a- Si TFT and a-Si PIN preparation and fine pattern for low- temperature PI film. As a result, we obtained 2D a-Si TFT/PIN image sensor (6 X 12 pixels) which has signal readout and sensor function. We tested and analyzed its static characteristic. The results indicate that the characteristics of PIN photodiode and TFT switch are better, and the performance of illumination response of the 2D image sensor is good. We propose to apply the image sensor into neural network system in order to decrease cross-coupling between pixels and increase parallel processing rate.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ying Zhao, Jing Li, Junfeng Li, and Shaozhen Xiong "a-Si TFT/PIN two-dimensional image sensor", Proc. SPIE 3545, International Symposium on Multispectral Image Processing (ISMIP'98), (25 September 1998); https://doi.org/10.1117/12.323641
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KEYWORDS
Amorphous silicon

Image sensors

Neural networks

Optoelectronics

Switches

Charge-coupled devices

Infrared radiation

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