18 December 1998 Detecting CD error or transmission error of photomask patterns
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Abstract
Whereas critical-dimension (CD) error below 35 nm and transmission error below 3.5% are required for 256 M DRAM, a present-day cutting-edge inspection system may fail to detect 150 nm CD error or 6% transmission error. Improvement of defect inspection is, therefore, necessary to raise yields of semiconductor devices. A new inspection algorithm has been developed for CD error and transmission error of photomask patterns by calculating the average transmission error. Experimental results show as small as 4% transmission error or over 25 nm CD error of hole pattern will be detected without any false alarms.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyoji Yamashita, Kyoji Yamashita, } "Detecting CD error or transmission error of photomask patterns", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332819; https://doi.org/10.1117/12.332819
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