18 December 1998 Development of a next-generation e-beam lithography system
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One of the keys for ULSI lithography at a feature size ranging from 180 nm to 150 nm is a stable supply of ultra high precision reticle masks. To meet this demand, we have developed a new electron beam lithography system for reticle masks which offers an exposure accuracy of 20 to 30 nm. The system features a variable shaped beam, 50 kV accelerating voltage, a step-and-repeat stage, nd incorporates new technologies. These include a high resolution-high current density electron optical system, a per-shot focus and shot time correction unit, a high precision beam measurement system utilizing the fitting function method, a single-stage 20 bit electrostatic beam deflection unit and beam-shot smoothing technology. The system achieves a minimum line width of 100 nm or less, a pattern size uniformity of 16 nm (3 sigma) within a field, a field stitching accuracy of plus or minus 19 nm or smaller, and a pattern placement accuracy of plus or minus 29 nm or smaller, resulting in an exposure speed of 3 to 5 times faster than the existing model.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasutoshi Nakagawa, Yasutoshi Nakagawa, Tadashi Komagata, Tadashi Komagata, Hitoshi Takemura, Hitoshi Takemura, Nobuo Gotoh, Nobuo Gotoh, Kazumitsu Tanaka, Kazumitsu Tanaka, } "Development of a next-generation e-beam lithography system", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332823; https://doi.org/10.1117/12.332823

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