18 December 1998 Inspection of OPC reticle for 0.18-um-rule devices
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Abstract
Defect printability and sensitivity of reticle inspection systems were studied for 0.18 micrometer-rule devices. For our evaluation, an OPC test reticle was designed, and fabricated with E-beam and dry-etching. Base patterns are 0.18 micrometer-rule memory cells. Serif length is 0.3 micrometer and step is 0.1 micrometer (on reticle). The programmed defects have varieties of types, locations, and sizes. For the defect printability test, we used a 4 X KrF scanner (NA equals 0.6, (sigma) equals 0.75), and resist image was measured by CD-SEM. The defects which cause more than plus or minus 5% CD error were defined as 'printable' defects. It was cleared that very small defects can be printed on the wafer. For instance, 50 nm side placement defects were printed. Several inspection systems were evaluated and compared with our printability specification. From our result, there were no systems which have better performance than our specification. However, some latest systems were very close to our specification.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akihiko Ando, Akihiko Ando, Yoji Tono-oka, Yoji Tono-oka, Hiroyuki Shigemura, Hiroyuki Shigemura, Haruo Iwasaki, Haruo Iwasaki, Hiroyoshi Tanabe, Hiroyoshi Tanabe, "Inspection of OPC reticle for 0.18-um-rule devices", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332835; https://doi.org/10.1117/12.332835
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