18 December 1998 Mask specifications and OPC
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Abstract
The paper evaluates the implications of optical proximity correction (OPC) to mask specifications. This is done by simulation of 200 nm design rule structures using a conventional simulation tool for long lines and using the simulation module of an OPC-tool for more complicated design situations. Both tools were parameterized for a state-of-the- art lithography process using a 0.6 NA stepper and a chemically amplified resist. As long as OPC stays within reasonable limits (minimum feature size greater than 60% of the input pattern), the printability of a defect is about the same as in a dense line/space array. A defect of 200 nm size on a 4X mask produces change in linewidth of about 20 nm. Even for masks with subresolution structures, the increase of printability of mask defects is within 10% compared to un- corrected masks. However, simulation using resist parameters cannot reproduce the aerial image result, that masks with outriggers are less sensitive to mask linewidth variation than conventional masks.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wilhelm Maurer, Christoph M. Friedrich, "Mask specifications and OPC", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332831; https://doi.org/10.1117/12.332831
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