New MEBES pattern generator

Jan M. Chabala; Frank E. Abboud; Suzanne Weaver; Damon M. Cole

doi:10.1117/12.332854

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18 December 1998 New MEBES pattern generator

Jan M. Chabala, Frank E. Abboud, Suzanne Weaver, Damon M. Cole

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Proceedings Volume 3546, 18th Annual BACUS Symposium on Photomask Technology and Management; (1998) https://doi.org/10.1117/12.332854
Event: 18th Annual BACUS Symposium on Photomask Technology and Management, 1998, Redwood City, CA, United States

Abstract

Pattern generation tools must employ improved hardware and new writing strategies to accommodate progressively smaller geometries. At the same time, the lithographic process and metrology strategy must evolve to achieve targets for minimum feature size and feature quality. The MEBES 5000 electron-beam (e-beam) system incorporates hardware and process improvements necessary for 180-nm mask production. Significantly, the system can deliver the high dose needed to pattern advanced resists in practical times. This report describes the 320-MHz data path implemented on the MEBES 5000 system. With additional improvements, including updated temperature regulation and dynamic correction of scan errors, improved throughput and critical dimension (CD) control are achieved. Multipass gray (MPG) is the recommended writing strategy for writing small-address patterns. This high-throughput writing strategy is described in some detail. The high doses that are possible with MPG support the use of high-contrast resists and dry etch. As documented here, patterns with excellent CD qualities can be produced rapidly with MPG and ZEP 7000 resist.

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Jan M. Chabala, Frank E. Abboud, Suzanne Weaver, and Damon M. Cole "New MEBES pattern generator", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); https://doi.org/10.1117/12.332854

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