Paper
18 December 1998 Some challenges for mask making to keep up with the roadmap
Author Affiliations +
Abstract
This paper discuses the need for additional mask quality factors for implementation into a further roadmap. These factors are expected to affect the printed image on wafer. Especially the global idea of pattern fidelity is introduced. Low voltage scanning electron microscopy can offer the capability to mask makers to deliver this extra information. This knowledge should lead to a better understanding how mask imperfections may contribute to the overall lithography error budget. This understanding will need to rely on stronger collaboration between mask maker and mask user. Using simulation data and the so-called mask error factor, it is shown that certain mask strategies may allow larger mask error budgets.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rik M. Jonckheere, John N. Randall, Thomas Marschner, and Kurt G. Ronse "Some challenges for mask making to keep up with the roadmap", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); https://doi.org/10.1117/12.332839
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Critical dimension metrology

Semiconducting wafers

Reticles

Optical proximity correction

Mask making

Lithography

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