18 December 1998 Stencil mask technology for ion beam lithography
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Abstract
Ion beam lithography is one of the most promising future lithography technologies. A helium or hydrogen ion beam illuminates a stencil membrane mask and projects the image with 4X reduction to the wafer. The development of stencil masks is considered to be critical for the success of the new technology. Since 1997, within the European Ion Projection Lithography MEDEA (Microelectronic Devices for European Applications) project silicon stencil masks based on a wafer- flow process are developed. They are produced in a conventional wafer line. Six inch SOI (silicon-on-insulator) wafers are patterned with an e-beam wafer writing tool, then trenches are etched by plasma etching. Afterwards, the membrane is etched by wet etch using the SOI-oxide layer as an etch stop. The last step is to add a coating layer, which is sputtered onto the membrane. It protects the mask against ion irradiation damage. For metrology and inspection, methods used for conventional chromium masks as well as new techniques are investigated. Results from placement measurements on the Leica LMS IPRO tool will be presented. Finally, methods for CD measurement, defect inspection, repair and in-situ-cleaning in the stepper will be discussed, including experimental information of first tests.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albrecht Ehrmann, Albrecht Ehrmann, Sabine Huber, Sabine Huber, Rainer Kaesmaier, Rainer Kaesmaier, Andreas B. Oelmann, Andreas B. Oelmann, Thomas Struck, Thomas Struck, Reinhard Springer, Reinhard Springer, Joerg Butschke, Joerg Butschke, Florian Letzkus, Florian Letzkus, Karl Kragler, Karl Kragler, Hans Loeschner, Hans Loeschner, Ivo W. Rangelow, Ivo W. Rangelow, } "Stencil mask technology for ion beam lithography", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332827; https://doi.org/10.1117/12.332827
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