We have developed a new attenuating embedded phase-shift mask blank for 193 nm lithography based on novel TiSi-nitride chemistry. At 193 nm, these materials offer high optical transmission, they are radiation damage resistant, stable in common chemicals used to strip photoresist, process compatible with use of a hard Cr etch mask, and exhibit good dry etch selectivity to quartz. Specifically, optical transmissions of greater than 10% were achieved in films with 180 degree phase- shift. Irradiation at 6 mJ/cm2/pulse, or approximately 60x the energy densities in commercial steppers, caused small change in optical transmission for doses up to 2 kJ/cm2. Dry etching the films in an ICP reactor with CF4 gave a greater than 6:1 etch selectivity to quartz. Further, the novel wavelength-tunable structure of these TiSi-nitride films permits equally attractive phase-shift designs at 248 nm and longer wavelengths.