1.3-um InGaAsP/InP strained-layer multiquantum well complex-coupled distributed feedback laser

Bo Chen; Wei Wang; Xiaojie Wang; Jingyuan Zhang; Hongliang Zhu; Fan Zhou

doi:10.1117/12.319626

19 August 1998 1.3-μm InGaAsP/InP strained-layer multiquantum well complex-coupled distributed feedback laser

Bo Chen, Wei Wang, Xiaojie Wang, Jingyuan Zhang, Hongliang Zhu, Fan Zhou

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319626
Event: Photonics China '98, 1998, Beijing, China

Abstract

1.3 micrometers strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degree(s)C are reported. The low threshold current of 10 mA and high single-facet slope efficiency of 0.3 mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Citation Download Citation

Bo Chen, Wei Wang, Xiaojie Wang, Jingyuan Zhang, Hongliang Zhu, and Fan Zhou "1.3-μm InGaAsP/InP strained-layer multiquantum well complex-coupled distributed feedback laser", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319626

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