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19 August 1998 Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319623
Event: Photonics China '98, 1998, Beijing, China
Abstract
The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices, and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property, optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implantation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N2/O2/Ar gas flow rate.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongsheng Mao, Manqing Tan, and Lianhui Chen "Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319623
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