19 August 1998 Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells
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Proceedings Volume 3547, Semiconductor Lasers III; (1998); doi: 10.1117/12.319622
Event: Photonics China '98, 1998, Beijing, China
Abstract
In terms of the parameter interpolation principle, calculations are performed for bandgaps and band offsets in strain-compensated InzGa1-zAs/InxGa1-xAsyP1-y multiple quantum well structures on InP. Relations between strains and material compositions in InzGa1-zAs wells and InxGa1-xAsyP1-y barriers are analyzed, and relative ranges of strains are evaluated. Bandgaps of InzGa1-zAs wells and InxGa1-xAsyP1-y barriers for heavy- and light-holes are studied, and relative ranges of bandgaps are estimated. Dependence of band offsets of conduction band and valence band for heavy- and light-holes on strain compensation between InzGa1-zAs wells and InxGa1-xAsyP1-y barriers is investigated, and variation of band offsets versus strain compensation is discussed. The computed results show that strains, bandgaps and band offsets are functions of material compositions, strain compensation changes the band offsets, and hence modifies the band structures and improves the features of strain- compensated multiple quantum well optoelectronic devices.
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Chunsheng Ma, Zhi Jin, Fengshou Tian, Ningguo Yang, Shuren Yang, Shiyong Liu, "Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319622; https://doi.org/10.1117/12.319622
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KEYWORDS
Quantum wells

Indium

Arsenic

Gallium

Gallium arsenide

Indium arsenide

Optoelectronic devices

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