19 August 1998 Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319646
Event: Photonics China '98, 1998, Beijing, China
Abstract
Graded-index separate-confinement strained quantum well InGaAs/GaAs/GaAlAs lasers grown by metalorganic chemical- vapor deposition with carbon tetrachloride used as p-doped source for upper cladding layer and the capping layer are studied. By SIMS and electrochemical capacitance-voltage measurements, the desirable quantum well structure and the suitable doping and carrier concentrations profiles are found to be obtained. The grown crystals show good optical characteristics through the photoluminescence spectrum measurement of the upper cladding layer and the active layer. The oxide-stripe and the ridge waveguide stripe lasers are fabricated, the lower threshold current densities 160 A/cm2 (uncoated) with 1500 micrometers long cavity are obtained. The differential quantum efficiency and the output power can be up to 0.4 W/A and 500 mw (uncoated).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tao Yin, Peng Lian, ZunTu Xu, Changhua Chen, Hongdong Zhao, Deshu Zou, Jianxing Chen, Guo Gao, Jinyu Du, Changbao Tao, Guangdi Shen, Hui Lu, Lianxi Zheng, Lianhui Chen, "Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319646; https://doi.org/10.1117/12.319646
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