19 August 1998 Characteristics of 1.55-μm gain-switched DFB laser diode
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319604
Event: Photonics China '98, 1998, Beijing, China
The paper presents both numerical and experimental investigations on the behavior of 1.55 micrometers distributed feedback (DFB) laser diode (LD) driven by strong RF power. The picosecond dynamic response of gain-switched DFB LD can be analyzed by appropriate rate equations. The results of experimental research are generally in good agreement with the numerical calculations and the minimum pulse width is about 17 ps under 1 GHz, 20 dBm RF modulation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuncai Wang, Yuncai Wang, Guofu Chen, Guofu Chen, Xianhua Wang, Xianhua Wang, "Characteristics of 1.55-μm gain-switched DFB laser diode", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319604; https://doi.org/10.1117/12.319604


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