19 August 1998 High-power BA Al-free InGaAsP/GaAs SCH SQW lasers
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319636
Event: Photonics China '98, 1998, Beijing, China
Abstract
By using a recently modified LPE technique, extremely uniform InGaAsP/GaAs SCH SQW structure materials could be grown reproducibly. Single stripe lasers with 150 um emitting aperture generate 4.0 W in CW by improvement of waveguiding parameters and ohmic contact process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoxue Bo, Xin Gao, Baoshun Zhang, Baoren Zhu, Yuxia Wang, Xingde Zhang, "High-power BA Al-free InGaAsP/GaAs SCH SQW lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319636; https://doi.org/10.1117/12.319636
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