19 August 1998 High-power BA Al-free InGaAsP/GaAs SCH SQW lasers
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319636
Event: Photonics China '98, 1998, Beijing, China
By using a recently modified LPE technique, extremely uniform InGaAsP/GaAs SCH SQW structure materials could be grown reproducibly. Single stripe lasers with 150 um emitting aperture generate 4.0 W in CW by improvement of waveguiding parameters and ohmic contact process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoxue Bo, Baoxue Bo, Xin Gao, Xin Gao, Baoshun Zhang, Baoshun Zhang, Baoren Zhu, Baoren Zhu, Yuxia Wang, Yuxia Wang, Xingde Zhang, Xingde Zhang, } "High-power BA Al-free InGaAsP/GaAs SCH SQW lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319636; https://doi.org/10.1117/12.319636

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