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19 August 1998 High-quality carbon-doped GaAs/AlGaAs material growth in MOCVD and its application for optoelectronic devices
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319617
Event: Photonics China '98, 1998, Beijing, China
Abstract
Liquid carbon tetrachloride (CCl4) was used as dopants for the growth of p-type GaAs and AlGaAs materials by low pressure metalorganic chemical vapor phase deposition. Heavily carbon doped (1.9 X 1020 cm-3) GaAs and high quality p-type Al0.3Ga0.7As materials were obtained. Several key growth parameters, such as growth temperature (560 degree(s)C - 725 degree(s)C), V/III ration (20 - 150) and CCl4 molecular flow (10-7 mol/min- 10-5 mol/min), were changed to investigate their influence on doping efficiency, growth rate and material properties. Electrochemistry capacity-voltage, Hall effect and photoluminescence methods were adopted to measure the electrical and optical properties. X ray double crystal diffraction method was used to study the relationships of carbon doping level and crystal lattice constant of epitaxial layers. On the basis of these research, carbon doped GaAs tunnel diode and high power GaAs/AlGaAs/InGaAs strain quantum well semiconductor laser structures were grown to qualify the carbon doped GaAs/AlGaAs materials comprehensively.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Lian, Tao Yin, ZunTu Xu, Hongdong Zhao, Deshu Zou, Guo Gao, Jinyu Du, Changhua Chen, Changbao Tao, Jianxing Chen, Guangdi Shen, Qing Cao, Xiaoyu Ma, and Lianhui Chen "High-quality carbon-doped GaAs/AlGaAs material growth in MOCVD and its application for optoelectronic devices", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319617
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