19 August 1998 High-speed quantum well and quantum dot lasers
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319650
Event: Photonics China '98, 1998, Beijing, China
Abstract
The characteristics of high-speed quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 micrometers (48 GHz) and 1.55 micrometers (26 GHz) by tunneling electrons directly into the lasing subband. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to approximately 7 GHz at room temperature and 23 GHz at 80 K.
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Pallab Bhattacharya, Xiangkun Zhang, Kishore K. Kamath, David Klotzkin, Jamie D. Phillips, Catherine Caneau, Rajaram J. Bhat, "High-speed quantum well and quantum dot lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319650; https://doi.org/10.1117/12.319650
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