19 August 1998 High-speed quantum well and quantum dot lasers
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319650
Event: Photonics China '98, 1998, Beijing, China
The characteristics of high-speed quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 micrometers (48 GHz) and 1.55 micrometers (26 GHz) by tunneling electrons directly into the lasing subband. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to approximately 7 GHz at room temperature and 23 GHz at 80 K.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pallab Bhattacharya, Pallab Bhattacharya, Xiangkun Zhang, Xiangkun Zhang, Kishore K. Kamath, Kishore K. Kamath, David Klotzkin, David Klotzkin, Jamie D. Phillips, Jamie D. Phillips, Catherine Caneau, Catherine Caneau, Rajaram J. Bhat, Rajaram J. Bhat, } "High-speed quantum well and quantum dot lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319650; https://doi.org/10.1117/12.319650

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