19 August 1998 Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319596
Event: Photonics China '98, 1998, Beijing, China
980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm2, output light power 2W in continuous wave, slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T0 is 330 degree(s)K.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lijun Wang, Lijun Wang, Sheng Li Wu, Sheng Li Wu, Yun Liu, Yun Liu, Yongqiang Ning, Yongqiang Ning, Jacqueline E. Diaz, Jacqueline E. Diaz, Ivan Eliashevich, Ivan Eliashevich, Hyuk Jong Yi, Hyuk Jong Yi, Manijeh Razeghi, Manijeh Razeghi, } "Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319596; https://doi.org/10.1117/12.319596


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