Large-signal regime four-wave mixing characteristcs of multisection laser diodes

J. M. Tang; Keith Alan Shore

doi:10.1117/12.319638

19 August 1998 Large-signal regime four-wave mixing characteristcs of multisection laser diodes

J. M. Tang, Keith Alan Shore

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319638
Event: Photonics China '98, 1998, Beijing, China

Abstract

The coupled equations for describing nearly degenerate four- wave mixing in laser diodes subject to strong probe injection power are derived, taking into account the influence of pump depletion and carrier diffusion. The model can also be used to investigate the dependence of reflectivity efficiencies and bandwidth on the different parameters of the lasers and different signal injection powers in multisection laser diodes. The analysis will give opportunities for optimizing the parameters of mixing processes, cavity structure and input signal power.

Citation Download Citation

J. M. Tang and Keith Alan Shore "Large-signal regime four-wave mixing characteristcs of multisection laser diodes", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319638

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