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19 August 1998 Novel surface-sensitive diode lasers for chemical detection
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Proceedings Volume 3547, Semiconductor Lasers III; (1998)
Event: Photonics China '98, 1998, Beijing, China
A novel near-infrared diode laser having sensitivity to change of absorption and refractive index at its surface- sensitive region is presented. This semiconductor laser utilizes an AlGaAs single quantum well structure emitting at a wavelength of 950 nm, and its dimensions are 1 mm X 0.5 mm X 0.2 mm. One of the cladding layers is thinned such that the evanescent wave in the quantum well interacts with a surface-sensitive region on the laser. A theoretical model of laser sensitivity toward changes in absorption of a dye- doped polymer coating is formulated. Experimental data using the surface-sensitive diode laser for sensing ammonia and adsorbed monolayers of molecular films are presented. The output power, threshold current and wavelength are shown to be affected by the changes in the adsorbed coating.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Peter Lo, Howard P. Groger, Shufang Luo, and Russell J. Churchill "Novel surface-sensitive diode lasers for chemical detection", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998);


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