Translator Disclaimer
19 August 1998 Optical-disk-mode pattern of InGaP microdisks emitting at 0.65 μm
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998)
Event: Photonics China '98, 1998, Beijing, China
We report our study on the optical properties and the disk mode pattern of InGaP microdisks. The semiconductor InGaP microdisks with radius of about 5 micrometers emitting at wavelength of 0.65 micrometers were fabricated on liquid phase epitaxial grown InGaP/AlGaAs/GaAs wafer on the substrate of (100)GaAs. The optical properties of InGaP microdisks were studied by photoluminescence, pump-probe femtosecond- transient reflectivity measurements. The strong enhancement of the PL intensity in the microdisks respect to that of the same un-patterned epitaxial wafer is obtained. In addition, the inhibition effect of the microdisks on the ultrafast decay of optical excited carriers is observed by the transient measurement. The fluorescence image of the InGaP microdisk is analyzed by a CCD fluorescence microscope system. Under the green light excitation, a bright red ring of fluorescence near the edge of microdisk is observed. The typical fluorescence intensity profiles as a function of radius in different microdisks are plotted out. As a result, the images reveal the optical disk mode pattern in our InGaP microdisks dominated by Whispering-Gallery modes and mixture with other modes.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bei-Wei Zhang, Yongchun Xin, Guozhong Wang, Wanjin Xu, Zongju Xia, and YingHua Zou "Optical-disk-mode pattern of InGaP microdisks emitting at 0.65 μm", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998);

Back to Top