19 August 1998 Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319607
Event: Photonics China '98, 1998, Beijing, China
Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/AlxGa1-xN (x approximately 0.07) and 45 angstroms/45 angstroms InxGa1-xN/GaN (x approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 micrometers in diameter and regularly spaced every 50 micrometers , were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (1) the radial mode type with a spacing of 49 - 51 meV (both TE and TM) and (2) the Whispering gallery mode with a spacing of 15 - 16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dai Lun, Dai Lun, Bei-Wei Zhang, Bei-Wei Zhang, Robin A. Mair, Robin A. Mair, Kecai Zeng, Kecai Zeng, Jing Yu Lin, Jing Yu Lin, Hongxing Jiang, Hongxing Jiang, Andrei Botchkarev, Andrei Botchkarev, W. Kim, W. Kim, Hadis Morkoc, Hadis Morkoc, Muhammad Asif Khan, Muhammad Asif Khan, } "Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319607; https://doi.org/10.1117/12.319607

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