19 August 1998 Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319633
Event: Photonics China '98, 1998, Beijing, China
Abstract
Aluminum-free laser diodes are InGaAsP/GaAs devices whose epitaxial layers do not contain aluminum. Studies comparing the GaAslAs/GaAs and InGaAsP/GaAs high power laser diodes allegedly indicate that aluminum-free lasers are more reliable due to a reduction of dark-line defects, sudden failures, and gradual degradation. The improved reliability of aluminum-free lasers is presumed to result from the elimination of oxidation of the aluminum-containing epitaxial layers of the laser facets. In this presentation, the performance and reliability of GaAlAs/GaAs and InGaAsP/GaAs high power laser diodes will be reviewed and compared. The present data shows that high reliable GaAlAs/GaAs lasers can be produced with good manufacturing practices.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. R. Pendse, D. R. Pendse, Aland K. Chin, Aland K. Chin, Ferdynand P. Dabkowski, Ferdynand P. Dabkowski, Edward M. Clausen, Edward M. Clausen, } "Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319633; https://doi.org/10.1117/12.319633
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