19 August 1998 Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319633
Event: Photonics China '98, 1998, Beijing, China
Abstract
Aluminum-free laser diodes are InGaAsP/GaAs devices whose epitaxial layers do not contain aluminum. Studies comparing the GaAslAs/GaAs and InGaAsP/GaAs high power laser diodes allegedly indicate that aluminum-free lasers are more reliable due to a reduction of dark-line defects, sudden failures, and gradual degradation. The improved reliability of aluminum-free lasers is presumed to result from the elimination of oxidation of the aluminum-containing epitaxial layers of the laser facets. In this presentation, the performance and reliability of GaAlAs/GaAs and InGaAsP/GaAs high power laser diodes will be reviewed and compared. The present data shows that high reliable GaAlAs/GaAs lasers can be produced with good manufacturing practices.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. R. Pendse, Aland K. Chin, Ferdynand P. Dabkowski, Edward M. Clausen, "Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319633; https://doi.org/10.1117/12.319633
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