19 August 1998 Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319597
Event: Photonics China '98, 1998, Beijing, China
It was observed that a twin-lobe like farfield appeared more obviously with larger stripe width of BA LD, also with increasing injected current, due to much more complicated lateral modes. As a consequence, a single-lobed farfield output of 2.0 W has been realized with BA InGaAsP/GaAs SCH SQW lasers (stripe width 150 um).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoxue Bo, Baoshun Zhang, Xin Gao, Ling Wang, Lixia Yang, Xingde Zhang, "Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319597; https://doi.org/10.1117/12.319597

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