19 August 1998 Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319597
Event: Photonics China '98, 1998, Beijing, China
It was observed that a twin-lobe like farfield appeared more obviously with larger stripe width of BA LD, also with increasing injected current, due to much more complicated lateral modes. As a consequence, a single-lobed farfield output of 2.0 W has been realized with BA InGaAsP/GaAs SCH SQW lasers (stripe width 150 um).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoxue Bo, Baoxue Bo, Baoshun Zhang, Baoshun Zhang, Xin Gao, Xin Gao, Ling Wang, Ling Wang, Lixia Yang, Lixia Yang, Xingde Zhang, Xingde Zhang, } "Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319597; https://doi.org/10.1117/12.319597

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