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19 August 1998 Study of single-mode 650-nm AlGaInP quantum well laser diodes for DVD
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Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319602
Event: Photonics China '98, 1998, Beijing, China
Abstract
Single mode 650 nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition was reported in this paper. Selected buried rigewaveguide were applied for single mode operation especially for DVD use. The operating temperature over 90 degree at CW output power 5 mW was achieved.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoyu Ma, Qing Cao, Shutang Wang, Liang Guo, Liming Wang, Yali Yang, Hongqin Zhang, Xiaoyan Zhang, and Lianhui Chen "Study of single-mode 650-nm AlGaInP quantum well laser diodes for DVD", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319602
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