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19 August 1998 Visible vertical-cavity surface-emitting laser
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Proceedings Volume 3547, Semiconductor Lasers III; (1998)
Event: Photonics China '98, 1998, Beijing, China
We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy. We use the 8(lambda) optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain of AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05(lambda) thick (x equals 0.5 approximately 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 X 3 micrometers ) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. WE employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8 mA; the wavelength is about 670 nm.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Cheng, Xiaoyu Ma, Junhua Gao, Xuejun Kang, Qing Cao, Hongjie Wang, Liping Luo, Chunhui Zhang, Xiuling Lu, and ShiMing Lin "Visible vertical-cavity surface-emitting laser", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998);

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