15 August 1998 Carbon nitride thin films deposited by nitrogen-ion-assisted laser ablation of graphite
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Abstract
Carbon nitride thin films were deposited on silicon wafers by pulsed KrF Excimer (wavelength 248 nm, duration 23 ns) ablation of graphite. Different excimer fluences and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. In another case, a Kaufmann-type ion source was used to produce a nitrogen ion beam to assist the deposition process. X-ray photoelectron spectroscopes (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The thin films deposited in nitrogen atmosphere had N/C ratio of 0.42, whilst those deposited with assistance of nitrogen ion beam bombardment had N/C equals 0.43. The dependence of the optical parameters of the deposited films, the refractive n and extinction coefficient k, were studied by Ellipsometry.
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ZhongMin Ren, Yongfeng Lu, H. Q. Ni, Z. F. He, Daniel S. H. Chan, Tohsiew Low, K. R. P. Gamani, G. X. Chen, Kebin Li, "Carbon nitride thin films deposited by nitrogen-ion-assisted laser ablation of graphite", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317936; https://doi.org/10.1117/12.317936
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