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15 August 1998 Electroluminescent diode with nanocrystalline Si active layer prepared by pulsed-laser ablation in inert gas
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Abstract
We report on an electroluminescent (EL) diode with novel active layers of silicon (Si) nanocrystallites. The Si nanocrystallite active layer was prepared by pulsed laser ablation (PLA) in an ambient of reduced pressure inert gas. The structure of the EL diodes was semitransparent platinum (Pt) electrode/Si nanocrystallite layer/p-type Si/Pt electrode. We have observed visible spectra of not only photoluminescence (PL) around 2.07 eV, but also EL around 1.66 eV at room temperature. The EL diodes initially showed a rectifying behavior which degraded after current stresses. Furthermore, we have found that the EL diodes showed strong nonlinear dependence of EL intensity on current density. A possible mechanism of the EL diode emission is impact ionization by minority hot carriers injected through the surface oxide layers and the successive radiative recombination.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takehito Yoshida, Yuka Yamada, and Takaaki Orii "Electroluminescent diode with nanocrystalline Si active layer prepared by pulsed-laser ablation in inert gas", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); https://doi.org/10.1117/12.317944
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