Formation of the patterned nanocrystalline Si by pulsed-laser interference crystallization of a-Si:H thin films

Mingxiang Wang; Kun-Ji Chen; Ming Jiang; Xiaoyong Liu; Zhuangchun Wu; Wei Li; Mu Wang; Xinfan Huang

doi:10.1117/12.317890

15 August 1998 Formation of the patterned nanocrystalline Si by pulsed-laser interference crystallization of a-Si:H thin films

Mingxiang Wang, Kun-Ji Chen, Ming Jiang, Xiaoyong Liu, Zhuangchun Wu, Wei Li, Mu Wang, Xinfan Huang

Author Affiliations +

Proceedings Volume 3550, Laser Processing of Materials and Industrial Applications II; (1998) https://doi.org/10.1117/12.317890
Event: Photonics China '98, 1998, Beijing, China

Abstract

We report a new method of preparing patterned nano-crystalline Si (nc-Si) by pulsed laser interference crystallization of a- Si:H thin films. A KrF excimer pulsed laser with wavelength 248 nm and pulse duration 30 ns is employed as a coherent ultra-violet beam source; a one-/two-dimensional (1D/2D) silica phase-shifting grating is used to form a high-contrast laser interference pattern behind it. During the laser treatment, the a-Si:H film is placed behind near contact with the phase grating. A transient thermal 1D/2D grid is then directly formed on the sample, leading to the local crystallization of the a-Si:H films and forming of nano- crystalline Si. The crystallinity of nc-Si films is verified by Raman scattering. Atomic force microscopy clearly shows a morphology of 1D/2D regular sub-micron patterns formed by locally crystallized stripes/dots, which are composed of densely gathered crystallites with a lateral size of approximately 50 - 100 nm and a height of approximately 10 - 20 nm. The interfaces between the crystallized and the amorphous zones are abrupt. Transmission electron micropsy demonstrates a lateral size distribution of nc-Si within the crystallized zones. This new approach has a potential application in the nano-electronics and nano-optoelectronics.

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Mingxiang Wang, Mingxiang Wang, Kun-Ji Chen, Kun-Ji Chen, Ming Jiang, Ming Jiang, Xiaoyong Liu, Xiaoyong Liu, Zhuangchun Wu, Zhuangchun Wu, Wei Li, Wei Li, Mu Wang, Mu Wang, Xinfan Huang, Xinfan Huang, "Formation of the patterned nanocrystalline Si by pulsed-laser interference crystallization of a-Si:H thin films", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317890; https://doi.org/10.1117/12.317890

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