15 August 1998 Formation of the patterned nanocrystalline Si by pulsed-laser interference crystallization of a-Si:H thin films
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We report a new method of preparing patterned nano-crystalline Si (nc-Si) by pulsed laser interference crystallization of a- Si:H thin films. A KrF excimer pulsed laser with wavelength 248 nm and pulse duration 30 ns is employed as a coherent ultra-violet beam source; a one-/two-dimensional (1D/2D) silica phase-shifting grating is used to form a high-contrast laser interference pattern behind it. During the laser treatment, the a-Si:H film is placed behind near contact with the phase grating. A transient thermal 1D/2D grid is then directly formed on the sample, leading to the local crystallization of the a-Si:H films and forming of nano- crystalline Si. The crystallinity of nc-Si films is verified by Raman scattering. Atomic force microscopy clearly shows a morphology of 1D/2D regular sub-micron patterns formed by locally crystallized stripes/dots, which are composed of densely gathered crystallites with a lateral size of approximately 50 - 100 nm and a height of approximately 10 - 20 nm. The interfaces between the crystallized and the amorphous zones are abrupt. Transmission electron micropsy demonstrates a lateral size distribution of nc-Si within the crystallized zones. This new approach has a potential application in the nano-electronics and nano-optoelectronics.
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Mingxiang Wang, Mingxiang Wang, Kun-Ji Chen, Kun-Ji Chen, Ming Jiang, Ming Jiang, Xiaoyong Liu, Xiaoyong Liu, Zhuangchun Wu, Zhuangchun Wu, Wei Li, Wei Li, Mu Wang, Mu Wang, Xinfan Huang, Xinfan Huang, } "Formation of the patterned nanocrystalline Si by pulsed-laser interference crystallization of a-Si:H thin films", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317890; https://doi.org/10.1117/12.317890

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