15 August 1998 KrF excimer laser deposition of titanium thin films on silicon substrates
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Abstract
Pulsed laser deposition (PLD) of titanium thin films on p-type (100) silicon substrates by KrF excimer laser ablation is investigated by changing the deposition parameters during the thin film deposition. The influence of target-to-substrate distance, laser fluence and substrate temperature is studied for high quality titanium thin films. Energy dispersive x-ray (EDX) spectrum analysis of the thin films is also carried out. The surface texture of the titanium target after the laser irradiation is studied by scanning electron microscope (SEM) images. It is found that the most important deposition parameters which affect the thin film quality are target-to- substrate distance and laser fluence. A suitable target-to- substrate distance and laser fluence can minimize the deposition of micro-sized particulates on the thin films. By optimizing the deposition parameters, the less particulate, higher deposition rate and more uniform titanium thin films are grown on the silicon substrates for wafer metallization.
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Luowen Lu, Luowen Lu, Yongfeng Lu, Yongfeng Lu, Minghui Hong, Minghui Hong, T. M. Ho, T. M. Ho, Tohsiew Low, Tohsiew Low, "KrF excimer laser deposition of titanium thin films on silicon substrates", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317937; https://doi.org/10.1117/12.317937
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