15 August 1998 Laser-assisted chemical vapor deposition of diamond films
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In this paper, it is reported that diamond films have been synthesized by the Laser Assisted Chemical Vapor Deposition (LACVD) method using the mixture of acetone and hydrogen. The XeCl excimer laser with a wavelength of 308 nm has been utilized as photo-dissociation energy source for carbohydrate, and H2 has been predissociated by hot filament at the temperature of 2000 degrees Celsius. P-type silicone was employed as substrate, which temperature was controlled at about 800 degrees Celsius. The specimens deposited by the method of LACVD were analyzed and evaluated by Raman spectroscopy and scanning electronics microscopy (SEM) accordingly. A character peak of diamond films at 1332 cm-1 can be observed from Raman spectrum. The experimental result have shown that a high-quality diamond film can be obtained.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deming Ren, Xiaoyong Hu, Fengmei M. Liu, Yanchen Qu, Jingshan Zhao, "Laser-assisted chemical vapor deposition of diamond films", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317961; https://doi.org/10.1117/12.317961

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