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15 August 1998 Method of preparation of nanometer crytalloid by laser vaporization-solidification and its mechanism
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Abstract
This paper, TiN nanometer crystalloid material is made by means of the high power laser vaporization-solidification method, which the equipment, technology process and experimental results are introduced. At same time, the mechanism study of TiN nanometer crystalloid material is carried out by this method. When Ti powder is radiated by a high power laser and N2 is insufflated, Ti is heated and evaporated quickly, come into being vapor of Ti-molecule and Ti-ion in space of tank. At high temperature, new TiN molecule are formed after Ti-ion collide whit N-ion and then become into big molecule groups. The results of analyzing by SEM proved that the particle size of TiN crystalloid is about 100 nm. The results show that relative symmetrical nanometer crystalloid material can be obtained by means of the vaporization-solidification method.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tieli Chen, Enyang Ren, Yihong Guan, Qingzhi Du, Bing Li, and Yun Gao "Method of preparation of nanometer crytalloid by laser vaporization-solidification and its mechanism", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); https://doi.org/10.1117/12.317932
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