15 August 1998 Pulsed-laser deposition of high-purity TiN thin films
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Abstract
TiN thin films were deposited on glass substrates by KrF excimer laser ablation of Ti in very broad N2 pressure range with different target-substrate distance at room temperature. The as-deposited TiN thin films were analyzed by x-ray diffraction and transmission electron microscopy. It is found that normally the as-deposited thin films are the mixture of TiN and Ti and the ratio of TiN to Ti of the as- deposited thin film depends on both the N2 pressure and the target-substrate distance. The high purity TiN thin films can be obtained only in a very narrow deposition parameter range. A compound parameter (the product of the N2 pressure and the target-substrate distance) is proposed to optimize deposition for high purity TiN thin films and the possible mechanism is also discussed. It is also revealed that the as-deposited TiN thin films were polycrystalline with an average grain size about 20 nm.
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Huidong Gu, Kang Ming Leung, Jonathan Chi Yuen Chung, X. D. Han, "Pulsed-laser deposition of high-purity TiN thin films", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317945; https://doi.org/10.1117/12.317945
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