15 August 1998 Pulsed-laser deposition of high-purity TiN thin films
Author Affiliations +
Abstract
TiN thin films were deposited on glass substrates by KrF excimer laser ablation of Ti in very broad N2 pressure range with different target-substrate distance at room temperature. The as-deposited TiN thin films were analyzed by x-ray diffraction and transmission electron microscopy. It is found that normally the as-deposited thin films are the mixture of TiN and Ti and the ratio of TiN to Ti of the as- deposited thin film depends on both the N2 pressure and the target-substrate distance. The high purity TiN thin films can be obtained only in a very narrow deposition parameter range. A compound parameter (the product of the N2 pressure and the target-substrate distance) is proposed to optimize deposition for high purity TiN thin films and the possible mechanism is also discussed. It is also revealed that the as-deposited TiN thin films were polycrystalline with an average grain size about 20 nm.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huidong Gu, Huidong Gu, Kang Ming Leung, Kang Ming Leung, Jonathan Chi Yuen Chung, Jonathan Chi Yuen Chung, X. D. Han, X. D. Han, } "Pulsed-laser deposition of high-purity TiN thin films", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317945; https://doi.org/10.1117/12.317945
PROCEEDINGS
8 PAGES


SHARE
Back to Top