12 August 1998 GaP/Si heterostructures grown by GS-MBE
Author Affiliations +
Abstract
GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Beam Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Auger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a (parallel) and a (perpendicular) are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinzhong Yu, Jinzhong Yu, Buwen Cheng, Buwen Cheng, Zhuo Yu, Zhuo Yu, Qiming Wang, Qiming Wang, "GaP/Si heterostructures grown by GS-MBE", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317986; https://doi.org/10.1117/12.317986
PROCEEDINGS
4 PAGES


SHARE
Back to Top