12 August 1998 High-power superluminescent diodes
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Abstract
A high power superluminescent diode (SLD) is developed on the basis of the terraced substrate inner laser diodes. The device is made of the characteristic of LPE of crystal on the non- planar substrate. The device's output power before assembled is 7 mW under operating current 150 mA. The wavelength is about 860 nm. The half width of the spectrum is 23 nm. The device is coupled with fiber (NA equals 0.23, D equals 50 micrometer). The coupling efficiency is about 30%. The pigtail fiber maximum output power is 2 mW.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Qu, Yi Qu, Xin Gao, Xin Gao, Baoshun Zhang, Baoshun Zhang, Li Wang, Li Wang, Xingde Zhang, Xingde Zhang, Guotong Du, Guotong Du, "High-power superluminescent diodes", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317977; https://doi.org/10.1117/12.317977
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