Photoluminescence measurement on erbium-doped silicon

Hongbing Lei; Qingqing Yang; Haiyan Ou; Qiming Wang

doi:10.1117/12.317999

12 August 1998 Photoluminescence measurement on erbium-doped silicon

Hongbing Lei, Qingqing Yang, Haiyan Ou, Qiming Wang

Proceedings Volume 3551, Integrated Optoelectronics II; (1998) https://doi.org/10.1117/12.317999
Event: Photonics China '98, 1998, Beijing, China

Abstract

Erbium-implanted silicones were treated by lamp-heating rapid thermal annealing (RTA). Two types of erbium-related photoluminescence spectra appear under different anneal temperatures. 750 degrees Celsius annealing optimizes the luminescence intensity, which does not change with anneal time. Exciton-mediated energy transfer model in erbium-doped silicon was presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er³⁺ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium-bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6.6 meV and 47.4 meV respectively.

Citation Download Citation

Hongbing Lei, Qingqing Yang, Haiyan Ou, and Qiming Wang "Photoluminescence measurement on erbium-doped silicon", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317999

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