12 August 1998 SPER and characteristics of Si1-yCy alloys
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Abstract
Si1-yCy alloys with carbon composition of 0.5 at% were successfully grown on n-Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of (beta) -SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.
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Zhuo Yu, Zhuo Yu, Jinzhong Yu, Jinzhong Yu, Buwen Cheng, Buwen Cheng, Zhenlin Lei, Zhenlin Lei, Daizong Li, Daizong Li, Qiming Wang, Qiming Wang, Junwu Liang, Junwu Liang, } "SPER and characteristics of Si1-yCy alloys", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317996; https://doi.org/10.1117/12.317996
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