11 August 1998 Deep levels in Hg1-xCdxTe using mobility and carrier concentration
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A new method of studying the deep levels in Hg1-xCdxTe was proposed. Through analyzing the relation between mobility and temperature and that between carrier concentration and temperature, we obtained some important information about deep levels. First, the Fermi level was calculated from the measured electron concentration by using the Kane's band model. Then the hole concentration was obtained from this Fermi level. Compared with the electron concentration calculated by the electrical neutrality equation, the measured one had the contribution from the deep level at the temperature range of about 200K. The electron mobility was also theoretically calculated. Deep level's contribution to the measured electron mobility was also discussed. Finally, a two levels model, and a fitting method as well, was proposed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangyang Li, Xiangyang Li, Xinwen Hu, Xinwen Hu, Huiqin Lu, Huiqin Lu, Jun Zhao, Jun Zhao, Jiaxiong Fang, Jiaxiong Fang, "Deep levels in Hg1-xCdxTe using mobility and carrier concentration", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318104; https://doi.org/10.1117/12.318104


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