11 August 1998 Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics
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Abstract
This paper briefly presents the recent development of IR physics and photo-electronic device, the HgCdTe detector is successfully used in the scanning radiometer on the meteorological satellites. As an important developing direction for the photo-electronic device, the low dimensional semiconductor structures are investigated. The interface intermixing technique has been developed to modify the energy band structure of multi-quantum wells and consequently response wavelength of the quantum well IR photoconductive detector. The quantum wires have been successfully grown and demonstrate good optical properties.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Lu, "Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318100; https://doi.org/10.1117/12.318100
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